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| SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : USC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. CATHODE MARK B 1 KDS4148U SILICON EPITAXIAL PLANAR DIODE G K A H E 2 D J C I DIM MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 100 75 450 150 2 150 -55 150 UNIT V V mA mA A mW M M A B C D E F G H I J K L M MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6 Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range 1. ANODE 2. CATHODE USC Marking Type Name UH ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr ) TEST CONDITION IF=1mA IF=10mA IF=100mA VR=75V VR=0V, f=1MHz IF=10mA MIN. TYP. 0.60 0.72 0.90 0.9 1.6 MAX. 1.20 0.5 2.0 4.0 A pF nS V UNIT SYMBOL 2004. 10. 5 Revision No : 1 F L 1/2 KDS4148U I F - VF 10 FORWARD CURRENT I F (mA) 10 10 C Ta =2 Ta 5 C =-2 5 C 0 3 I R - VR 10 REVERSE CURRENT I R (A) Ta=100 C Ta=75 C 2 1 1 10 10 -1 Ta = 10 10 -1 Ta=50 C -2 10 Ta=25 C -2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 20 40 60 80 FORWARD VOLTAGE V F (V) REVERSE VOLTAGE VR (V) C T - VR REVERSE RECOVERY TIME t rr (ns) 2.0 TOTAL CAPACITANCE CT (pF) 1.6 1.2 0.8 0.4 0 f=1MHz Ta=25 C t rr 100 50 30 - IF Ta=25 C Fig. 1 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 REVERSE VOLTAGE VR (R) FORWARD CURRENT I F (mA) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01F DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50) I F =10mA 0 IR WAVEFORM 0.1 I R 50 2k -6V 50ns E t rr PULSE GENERATOR (R OUT =50) 2004. 10. 5 Revision No : 1 50 2/2 |
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